VACUUM TUBE MADE IN JAPAN
IC,
NPN Silicon med pwr trans. 100V 800mA 10W 55-300 TO220?
P,UNI,50V,0.2A,0.25W,100MHZ
THYRISTOR 400V 0.3A TO-92 MITSUBISHI
PNP Si SS TRANSISTOR 50V 200mA 300mW 50- ~200 MHz
PNP Si SS TRANSISTOR 20V 1.5A 900mW 400-800 ~90 MHz
P,UNI,25V,0.7,0.5W,150MHZ,7B
P,UNI,45V,0.3A,0.5W,130M,7B
PNP Si SS dual TRANSISTOR 50V 100mA 200x2mW 250-1200 100 MHz
PNP Si SS TRANSISTOR 50V 200mA 300mW 90-500 200 MHz
N,UNI,ra,50V,0.2A,0.25W,140MHZ
N,UNI,100V,0.5A,0.8W,130M,7B
N,AM,80V,6A,16W,27M,17J
N,VHF,35V,7A,35W,175M,58S
N,VHF,35V,1A,4W,175M,2A
N,VHF,35V,1.2A,6.5W,175M,43A
N,UHF,35V,1A,3.5W,470M,58S
N,UHF-L,35V,5A,PQ=16W(470MHZ)
N,AM,60V,6A,16W,27M,17J
N,VHF,40V,0.6A,1.3W,175M,17J
N,VHF,40V,0.3A,0.2W,175M,7B
N,VHF,40V,3.5A,17.5W,175M,58S
N,HF,75V,4A,17J
N,NFS,35V,1.5A,7W,70M,13N
N,VHF,35V,2A,>7.5W,175M,58S
N,VHF,40V,0.4A,0.6W,175M,7B
N,VHF,35V,4A,17W,175M,58S
N,VHF,35V,3.5A,15W,175M,14G
N,UNI,50V,0.2A,0.3W,200M,7C
N,VHF,35V,14A,60W,175M,57S
N,UHF,35V,10A,32W,520M,57S
N,AM,50V,22A,110W,30M,57S
N,VHF,20V,3A,7W,175M,58S
N,UHF,35V,1A,10W,520M,58S
N,UHF,36V,2A,8W,520M,58S
N,UHF,35V,7A,22W,520M,58S
N,UHF,35V,1A,3.5W,520M,2A
N,UHF,20V,1.5A,3.2W,520M,58S
N,UNI,25V,0.1A,0.2W,180M,7B
