Bipolar NPN Device. VCEO = 45V IC = 1A
P-Channel PowerTrench MOSFET -30V, -11A, 13mOhm
12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 VID = 6.8 A
N-Channel Power MOSFET 20A, 500V, RDS(on) = 0.265Ω
