NFET,400V,25A,300W,23A Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
| Mfr Package Description | HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
| REACH Compliant | Yes |
| Status | Transferred |
| Avalanche Energy Rating (Eas) | 980.0 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 25.0 A |
| Drain Current-Max (ID) | 25.0 A |
| Drain-source On Resistance-Max | 0.23 ohm |
| DS Breakdown Voltage-Min | 400.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-204AE |
| JESD-30 Code | O-MBFM-P2 |
| JESD-609 Code | e0 |
| Number of Elements | 1.0 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 300.0 W |
| Power Dissipation-Max (Abs) | 300.0 W |
| Pulsed Drain Current-Max (IDM) | 100.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | PIN/PEG |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 219.0 ns |
| Turn-on Time-Max (ton) | 173.0 ns |
